Thermal laser cleaving

Scribing of brittle semiconductor materials

Confirmed for: silicon carbide, gallium nitride

Possible applications: gallium arsenide, germanium, other semiconductor materials

Patents: TW1592242(B), KR101944657(B1), EP3302866(B1) - further applied to GB, IE, DE, FR, NL, BE, LT, RU2677574(C1)

Pending patents: CN108472765(A), JP2018523291(A), US20190139799(A1)

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