Thermal laser cleaving
Scribing of brittle semiconductor materials
Confirmed for: silicon carbide, gallium nitride
Possible applications: gallium arsenide, germanium, other semiconductor materials
Patents: TW1592242(B), KR101944657(B1), EP3302866(B1) - further applied to GB, IE, DE, FR, NL, BE, LT, RU2677574(C1)
Pending patents: CN108472765(A), JP2018523291(A), US20190139799(A1)